c30659-900-1060-1550nm series silicon and ingaas apd preamplifier modules preliminary datasheet description description perkinelmer c30659 series includes a silicon or ingaas avalanche photodiode with a hybrid preamplifier. it is supplied in a single modified 12-lead to-8 package. the avalanche photodiodes used in these devices are the c30817e, c30902e, c30954e, c30956e, c30645e and c30662e that provide very good response between 830 and 1550 nanometers and very fast rise and fall times at all wavelengths. the preamplifier section uses a very low noise gaas fet front end designed to operate at higher transimpedance than the regular c30950 series. optoelectronics applications applications range finding confocal microscope lidar featur featur es es system bandwidth 50 mhz and 200 mhz ultra low noise equivalent power (nep) spectral response range: silicon apd: 400 to 1100nm ingaas apd: 1100 to 1700nm power consumption (150 mw typ.) +/-5 volts amplifier operating voltages 50 ? ac load capability hermetically sealed to-8 packages high reliability fast overload recovery pin compatible with the c30950 series light entry angle ? 130 the c30659 is pin to pin compatible with the c30950 series. the output of the c30659 is negative. an emitter follower is used as an output buffer stage. to obtain the wideband characteristics, the output of these devices should be ac (capacitively) coupled to a 50 ohm termination. the module must not be dc coupled to loads of less than 2,000 ohms. for field use, it is recommended that a temperature compensated hv supply be employed to maintain responsivity constant over temperature. www.optoelectronics.perkinelmer.com preliminary data sheet 117142_c30659.qxd 6/21/04 2:33 pm page 1
www.optoelectronics.perkinelmer.com c30659-900nm series c30659-900nm series page 2 test conditions: ambient temperature, v amp = ? volts, hv = +v r (see note 1), r l = 50 ? ac coupled 900nm silicon apd detector type c30659-900-r8a C30659-900-R5B (si apd c30817e) (si apd c30902e) min typ max min typ max active diameter 0.8 0.5 mm active area 0.5 0.2 mm 2 bandwidth range 50 200 mhz temperature coefficient of v r for constant gain - 2.2 - - 0.7 - v/? vr for specified responsivity 275 note 1 435 180 note 1 260 v temperature sensor sensitivity -1.8 -2.1 -2.4 -1.8 -2.1 -2.4 mv/? responsivity at 830nm - 2700 - - 460 - kv/w at 900nm - 3000 - - 400 - kv/w r f (internal feedback resistor) - 82 - - 12 - k ? noise equivalent power (nep) (note 3) f - 100 khz, ? f = 1.0 hz at 830nm - 14 17 - 35 55 fw/ hz at 900nm - 12 15 - 40 65 fw/ hz output spectral noise voltage: (f = 100 khz - f -3db ) - 35 45 - 15 25 nv/ hz output impedance 33 40 50 33 40 50 ? system bandwidth, f -3db 40 50 - 175 200 - mhz rise time, t r ( = 830 and 900nm) 10% to 90% points - 7 - - 2 - n s fall time, t f ( = 830 and 900nm) 90% to 10% points - 7 - - 2 - n s recovery time after overload (note 4) - - 150 - - 150 ns output voltage swing (1k ? load) (note 5) 2 3 - 2 3 - v output voltage swing (50 ? load) (note 5) 0.7 0.9 - 0.7 0.9 - v output o f fset v oltage -1 0.25 1 -1 0.25 1 v positive supply current (v+) - 20 35 - 20 35 ma negative supply current (v-) - 10 20 - 10 20 ma notes: 1. a specific value of v r is supplied with each device. the v r value will be within the specified ranges. 2. i f = 0.1 ma, 25? 3. nepmax is the maximum output spectral noise voltage max divided by the typical responsivity. 4. 0dbm, 250ns pulse. 5. pulsed operation. table 1. electrical characteristics at t a =22? 117142_c30659.qxd 6/21/04 2:33 pm page 2
www.optoelectronics.perkinelmer.com page 3 c30659-1060nm series c30659-1060nm series test conditions: ambient temperature, v amp = ? volts, hv = +v r (see note 1), r l = 50 ? ac coupled 1060nm silicon apd detector type c30659-1060-3a c30659-1060-r8b (si apd c30956e) (si apd c30954e) min typ max min typ max active diameter 3.0 0.8 mm active area 7.1 0.5 mm 2 bandwidth range 50 200 mhz temperature coefficient of v r for constant gain - 2.2 - - 2.2 - v/? vr for specified responsivity 275 note 1 425 275 note 1 425 v temperature sensor sensitivity -1.8 -2.1 -2.4 -1.8 -2.1 -2.4 mv/? responsivity at 900nm - 450 - - 370 - kv/w at 1060nm - 280 - - 200 - kv/w r f (internal feedback resistor) - 22 - - 12 - k ? noise equivalent power (nep) (note 3) f - 100 khz, ? f = 1.0 hz at 900nm - 55 80 - 55 80 fw/ hz at 1060nm - 90 125 - 100 150 fw/ hz output spectral voltage: (f = 100 khz - f -3db ) - 25 35 - 20 30 nv/ hz output impedance 33 40 50 33 40 50 ? system bandwidth, f -3db 40 50 - 175 200 - mhz rise time, t r ( = 900 and 1060nm) 10% to 90% points - 7 - - 2 - n s fall time, t f ( = 830 and 900nm) 90% to 10% points - 7 - - 2 - n s recovery time after overload (note 4) - - 150 - - 150 ns output voltage swing (1k ? load) (note 5) 2 3 - 2 3 - v output voltage swing (50 ? load) (note 5) 0.7 0.9 - 0.7 0.9 - v output o f fset v oltage -1 0.25 1 -1 0.25 1 v positive supply current (v+) - 20 35 - 20 35 ma negative supply current (v-) - 10 20 - 10 20 ma notes: 1. a specific value of v r is supplied with each device. the v r value will be within the specified ranges. 2. i f = 0.1 ma, 25? 3. nepmax is the maximum output spectral noise voltage max divided by the typical responsivity. 4. 0dbm, 250ns pulse. 5. pulsed operation. table 2. electrical characteristics at t a =22? 117142_c30659.qxd 6/21/04 2:33 pm page 3
www.optoelectronics.perkinelmer.com page 4 c30659-1550nm series c30659-1550nm series test conditions: ambient temperature, v amp = ? volts, hv = +v r (see note 1), r l = 50 ? ac coupled 1550nm ingaas apd detector type c30659-1550-r2a c30659-1550-r08b (ingaas apd c30662e) (ingaas apd c30645e) min typ max min typ max active diameter 0.2 0.08 mm active area 0.03 0.005 mm 2 bandwidth range 50 200 mhz temperature coefficient of v r for constant gain - 0.2 - - 0.2 - v/? vr for specified responsivity 40 note 1 70 40 note 1 70 v temperature sensor sensitivity -1.8 -2.1 -2.4 -1.8 -2.1 -2.4 mv/? responsivity at 1300nm - 300 - - 80 - kv/w at 1550nm - 340 - - 90 - kv/w r f (internal feedback resistor) - 68 - - 18 - k ? noise equivalent power (nep) (note 3) f - 100 khz, ? f = 1.0 hz at 1300nm - 150 180 - 250 375 fw/ hz at 1550nm - 130 160 - 220 330 fw/ hz output spectral voltage: (f = 100 khz - f -3db ) - 45 55 - 20 30 nv/ hz output impedance 33 40 50 33 40 50 ? system bandwidth, f -3db 40 50 - 175 200 - mhz rise time, t r ( = 900 and 1060nm) 10% to 90% points - 7 - - 2 - n s fall time, t f ( = 830 and 900nm) 90% to 10% points - 7 - - 2 - n s recovery time after overload (note 4) - - 150 - - 150 ns output voltage swing (1k ? load) (note 5) 2 3 - 2 3 - v output voltage swing (50 ? load) (note 5) 0.7 0.9 - 0.7 0.9 - v output o f fset v oltage - 1 -0.3 1 - 1 -0.3 1 v positive supply current (v+) - 20 35 - 20 35 ma negative supply current (v-) - 10 20 - 10 20 ma notes: 1. a specific value of v r is supplied with each device. the v r value will be within the specified ranges. 2. i f = 0.1 ma, 25? 3. nepmax is the maximum output spectral noise voltage divided by the typical responsivity. 4. 0dbm, 250ns pulse. 5. pulsed operation. table 3. electrical characteristics at t a =22? 117142_c30659.qxd 6/21/04 2:33 pm page 4
www.optoelectronics.perkinelmer.com c30659-900-1060-1550nm series c30659-900-1060-1550nm series page 5 +hv (4) v+ (12) v- (3) photodiode t8_anode (8) d1n914 10k 10n 10n 2.2k 33 out (1) rf d. 7v +yp t8_cathode (9) ground (6) (10) figure 1. c30659 series block diagram figure 2. spectral responsivity c30659-900-r8a C30659-900-R5B c30659-1060-r8b c30659-1060-3a 117142_c30659.qxd 6/21/04 2:33 pm page 5
www.optoelectronics.perkinelmer.com c30659-900-1060-1550nm series c30659-900-1060-1550nm series page 6 figure 2. spectral responsivity, continued c30659-1550-r08b c30659-1550-r2a figure 3. responsivity c30659-900-r8a c30659-1060-r8b c30659-1060-3a C30659-900-R5B 117142_c30659.qxd 6/21/04 2:33 pm page 6
www.optoelectronics.perkinelmer.com c30659-900-1060-1550nm series c30659-900-1060-1550nm series page 7 figure 3. responsivity, continued c30659-1550-r08b figure 4. typical response / noise curves 50 mhz receivers frequency noise 200 mhz receivers frequency noise c30659-1550-r2a output voltage noise normalization is calculated using the following formula: 117142_c30659.qxd 6/21/04 2:33 pm page 7
www.optoelectronics.perkinelmer.com c30659-900-1060-1550nm series c30659-900-1060-1550nm series page 8 table 4. absolute - maximum ratings, limiting values c30659-900 c30659-1060 c30659-1550 (si) (si) (ingaas) min typ max min typ max min typ max photodiode bias voltage: at ta = +70? - - 600 - - 600 - - 100 v at ta = - 40? - - 300 - - 300 - - 50 v incident radiant flux m average - - 0.1 1 - - 0.1 1 - - 2 1 mw peak - - 50 2 - - 50 2 - - 50 2 mw case temperature: storage, t stg -50 - 100 -50 - 100 -50 - 100 ? operating, t a -40 - 70 -40 - 70 -40 - 70 ? preamplifier voltage: -4.5 - -5.5 -4.5 - -5.5 -4.5 - -5.5 v notes: 1. based on 0.5w electrical power on high voltage supply. 2. test with pulse width of 50 ns. figure 5. mechanical characteristics pin connections 1: signal output 2: no connection 3: -vcc negative amplifier bias 4: positive high voltage 5: no connection 6: case ground 7: no connection 8: temp. sensing diode - anode 9: temp. sensing diode - cathode 10: ground, dc returns 11: no connection 12: +vcc positive amplifier bias 117142_c30659.qxd 6/21/04 2:33 pm page 8
www.optoelectronics.perkinelmer.com c30659-900-1060-1550nm series c30659-900-1060-1550nm series page 9 figure 6. optical geometry model detector s1 (mm) s2 (mm) d1 (mm) (deg) c30659-900-r8a c30817e 0.80 11 1.4 70 C30659-900-R5B c30902e 0.50 11 1.4 70 c30659-1060-3a c30956e 3.00 11 1.3 65 c30659-1060-r8b c30954e 0.80 11 1.3 70 c30659-1550-r2a c30662e 0.20 11 1.5 70 c30659-1550-r08b c30645e 0.08 11 1.5 70 table 5. ordering guide model description c30659-900-r8a 50 mhz, 900nm, 0.8mm active region diameter C30659-900-R5B 200 mhz, 900nm, 0.5mm active region diameter c30659-1060-3a 50 mhz, 1060nm, 3mm active region diameter c30659-1060-r8b 200 mhz, 1060nm, 0.8mm active region diameter c30659-1550-r2a 50 mhz, 1550nm, 0.2mm active region diameter c30659-1550-r08b 200 mhz, 1550nm, 0.08mm active region diameter ?004 perkinelmer inc. all rights reserved. or or dering information dering information while the information in this data sheet is intended to describe the form, fit and function for this product, perkinelmer reserves the right to make changes without notice. for more information e-mail us at opto@perkinelmer.com or visit our web site at www.optoelectronics.perkinelmer.com. all values a r e nominal; specifications subject to change without notice. perkinelmer canada inc. 16800 trans canada highway kirkland, qu?bec, h9h 5g7 canada phone: (514) 683-2200 fax: (514) 693-2210 perkinelmer gmbh & co. kg wenzel-jaksch-str.31 65199 wiesbaden phone: +49 611 492 247 fax: +49 611 492 170 perkinelmer singapore pte ltd. 47 ayer rajah crescent #06-12 singapore 139947 phone: +65 6775 2022 fax: +65 6775 1008 optoelectronics headquarters perkinelmer optoelectronics 44370 christy street fremont, ca 94538-3180 phone: (510) 979- 6 5 00 (800) 775-6786 fax: (510) 687-1140 117142_c30659.qxd 6/21/04 2:33 pm page 9
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